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Green Product
Sa mHop Microelectronics C orp.
P-Channel Enhancement Mode Field Effect Transistor
STS3429
Ver 2.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-30V
-3.2A
85 @ VGS=-10V 105 @ VGS=-4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
S OT-23
D S
G
D
G S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage ID Drain Current-Continuous c IDM -Pulsed a c
TA=25°C TA=70°C
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit -30 ±20 -3.2 -2.56 -12 1.25 0.
STS3429 Datasheet
