900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SamHop Microelectronics

STU28N15 Datasheet Preview

STU28N15 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STU28N15Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS ID RDS(ON) (mΩ) Max
150V
30A
46 @ VGS=10V
50 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-252 Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous c
TC=25°C
TC=100°C
IDM -Pulsed a c
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
Limit
150
±20
30
22
60
216
115
-55 to 175
1.3
55
Units
V
V
A
A
A
mJ
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jan,22,2016
www.samhop.com.tw




SamHop Microelectronics

STU28N15 Datasheet Preview

STU28N15 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STU28N15
Ver 1.0
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=120V , VGS=0V
VGS= ±20V , VDS=0V
150
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=20A
VGS=4.5V , ID=20A
VDS=5V , ID=20A
VDS=25V,VGS=0V
f=1.0MHz
VDD=50V
ID=10A
VGS=4.5V
RGEN= 3.3 ohm
VDS=75V,ID=10A,VGS=4.5V
VDS=75V,ID=10A,
VGS=4.5V
1.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Starting TJ=25°C,L=0.3mH,VDD = 25V.
e.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ Max Units
1
±100
V
uA
nA
2.5 V
35 46 m ohm
37 50 m ohm
55 S
3755
207
160
pF
pF
pF
18 ns
20 ns
65 ns
15 ns
40 nC
10 nC
21 nC
1.2 V
Jan,22,2016
2 www.samhop.com.tw


Part Number STU28N15
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
PDF Download

STU28N15 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STU28N15 N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy