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SamHop Microelectronics

STU441S Datasheet Preview

STU441S Datasheet

P-Channel Enhancement Mode Field Effect Transistor

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STU/D441SGreen
Product
Sa mHop Microelectronics C orp.
P-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
-40V
-27A
35 @ VGS=10V
61 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
STU SERIES
TO - 252AA( D- PAK )
G
DS
STD SERIES
TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
TC=70°C
IDM -Pulsed b
EAS Sigle Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C
TC=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit
-40
±20
-27
-21.6
-82
49
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Feb,06,2010
www.samhop.com.tw




SamHop Microelectronics

STU441S Datasheet Preview

STU441S Datasheet

P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STU/D441S
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA
VDS=-32V , VGS=0V
VGS= ±20V , VDS=0V
-40
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=-250uA
VGS=-10V , ID=-13.5A
VGS=-4.5V , ID=-10A
VDS=-10V , ID=-13.5A
-1
VDS=-20V,VGS=0V
f=1.0MHz
VDD=-20V
ID=-1.0A
VGS=-10V
RGEN= 6 ohm
VDS=-20V,ID=-13.5A,VGS=-10V
VDS=-20V,ID=-13.5A,VGS=-4.5V
VDS=-20V,ID=-13.5A,
VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Is Maximum Continuous Drain-Source Forward Current
VSD Diode Forward Voltage b
VGS=0V,IS= -2A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 20V .(See Figure13)
Typ Max Units
1
±100
V
uA
nA
-1.9 -3
V
28 35 m ohm
45 61 m ohm
23 S
1025
127
110
18
19
68
25
22.5
10.5
2.1
6.5
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
-2
-0.8 -1.3
A
V
Feb,06,2010
2 www.samhop.com.tw


Part Number STU441S
Description P-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 8 Pages
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