K4N26323AE-GC - 128Mbit GDDR2 SDRAM

Product Overview

Samsung

Part number	K4N26323AE-GC
Manufacturer	Samsung
File Size	821.36 KB
Description	128Mbit GDDR2 SDRAM
Datasheet	K4N26323AE-GC Datasheet
Additional preview pages of the K4N26323AE-GC datasheet.

- 1bank, 2bank system - Added System Selection mode in EMRS table.

2.5V + 0.1V power supply for device operation.
1.8V + 0.1V power supply for I/O interface.
On-Die Termination for all inputs except CKE,ZQ.
Output Driver Strength adjustment by EMRS.
SSTL_18 compatible inputs/outputs.
4 banks operation.
MRS cycle with address key programs - CAS latency : 5, 6, 7 (clock) - Burst length : 4 only - Burst type : sequential only.
Additive latency (AL): 0,1(clock).
Read latency(RL) : CL+.

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Published: Dec 23, 2016 |