Datasheet4U Logo Datasheet4U.com
Samsung Semiconductor logo

K4N26323AE-GC Datasheet

Manufacturer: Samsung Semiconductor
K4N26323AE-GC datasheet preview

Datasheet Details

Part number K4N26323AE-GC
Datasheet K4N26323AE-GC-Samsung.pdf
File Size 821.36 KB
Manufacturer Samsung Semiconductor
Description 128Mbit GDDR2 SDRAM
K4N26323AE-GC page 2 K4N26323AE-GC page 3

K4N26323AE-GC Overview

- Defined On-die Termination Status of 2Banks System Table. - Added On-die termination control - Changed OCD align mode entry / exit timing - Added target value of Data & DQS input/output capacitance(DQ0~DQ31) - Added Table for auto precharge control - Typo corrected. Revision 0.2 (November 2001) - Data Strobe Scheme is changed from DQS separation of Read DQS, Write DQS to Differential and Bi-directional DQS - OCD...

K4N26323AE-GC Key Features

  • 2.5V + 0.1V power supply for device operation
  • 1.8V + 0.1V power supply for I/O interface
  • On-Die Termination for all inputs e
Samsung Semiconductor logo - Manufacturer

More Datasheets from Samsung Semiconductor

See all Samsung Semiconductor datasheets

Part Number Description
K4N51163QC 512Mbit gDDR2 SDRAM
K4N51163QC-ZC 512Mbit gDDR2 SDRAM
K4N51163QZ 512Mbit gDDR2 SDRAM
K4N56163QF-GC 256Mbit gDDR2 SDRAM
K4N56163QG 256Mbit gDDR2 SDRAM

K4N26323AE-GC Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts