K4N26323AE-GC Datasheet 128mbit Gddr2 Sdram

Manufacturer: Samsung Semiconductor

Overview: K4N26323AE-GC 128M GDDR2 SDRAM 128Mbit GDDR2 SDRAM 1M x 32Bit x 4 Banks GDDR2 SDRAM with Differential Data Strobe and DLL Revision 1.

Datasheet Details

Part number	K4N26323AE-GC
Manufacturer	Samsung Semiconductor
File Size	821.36 KB
Description	128Mbit GDDR2 SDRAM
Datasheet	K4N26323AE-GC-Samsung.pdf

Key Features

2.5V + 0.1V power supply for device operation.
1.8V + 0.1V power supply for I/O interface.
On-Die Termination for all inputs except CKE,ZQ.
Output Driver Strength adjustment by EMRS.
SSTL_18 compatible inputs/outputs.
4 banks operation.
MRS cycle with address key programs - CAS latency : 5, 6, 7 (clock) - Burst length : 4 only - Burst type : sequential only.
Additive latency (AL): 0,1(clock).
Read latency(RL) : CL+.

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