K4N51163QC - 512Mbit gDDR2 SDRAM

Product Overview

Samsung

Datasheet Details

Part number	K4N51163QC
Manufacturer	Samsung
File Size	1.00 MB
Description	512Mbit gDDR2 SDRAM
Datasheet	K4N51163QC Datasheet
Additional preview pages of the K4N51163QC datasheet.

Product details

Description

FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device.This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications.The chip is designed to comply with the following key gDDR2 SDRAM

Features

1.8V + 0.1V power supply for device operation.
1.8V + 0.1V power supply for I/O interface.
4 Banks operation.
Posted CAS.
Programmable CAS Letency : 3,4,5.
Programmable Additive Latency : 0, 1, 2, 3 and 4.
Write Latency (WL) = Read Latency (RL) -1.
Burst Legth : 4 and 8 (Interleave/nibble sequential).
Programmable Sequential/ Interleave Burst Mode 512M gDDR2 SDRAM.
Bi-directional Differential Data-Strobe.

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Published: Apr 4, 2014 |