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K4N51163QC Datasheet 512mbit Gddr2 Sdram

Manufacturer: Samsung Semiconductor

Overview: http://.BDTIC./SAMSUNG K4N51163QC 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM Revision 1.

Key Features

  • 1.8V + 0.1V power supply for device operation.
  • 1.8V + 0.1V power supply for I/O interface.
  • 4 Banks operation.
  • Posted CAS.
  • Programmable CAS Letency : 3,4,5.
  • Programmable Additive Latency : 0, 1, 2, 3 and 4.
  • Write Latency (WL) = Read Latency (RL) -1.
  • Burst Legth : 4 and 8 (Interleave/nibble sequential).
  • Programmable Sequential/ Interleave Burst Mode 512M gDDR2 SDRAM.
  • Bi-directional Differential Data-Strobe.

More Datasheets from Samsung Semiconductor

Part Number Description
K4N51163QC-ZC 512Mbit gDDR2 SDRAM
K4N51163QZ 512Mbit gDDR2 SDRAM
K4N56163QF-GC 256Mbit gDDR2 SDRAM
K4N56163QG 256Mbit gDDR2 SDRAM
K4N26323AE-GC 128Mbit GDDR2 SDRAM

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