K4N51163QC Overview
http://.BDTIC./SAMSUNG K4N51163QC 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM Revision 1.8 October 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL...
K4N51163QC Key Features
- 1.8V + 0.1V power supply for device operation
- 1.8V + 0.1V power supply for I/O interface
- 4 Banks operation
- Posted CAS
- Programmable CAS Letency : 3,4,5
- Programmable Additive Latency : 0, 1, 2, 3 and 4
- Write Latency (WL) = Read Latency (RL) -1
- Burst Legth : 4 and 8 (Interleave/nibble sequential)
- Programmable Sequential/ Interleave Burst Mode
- Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
K4N51163QC Applications
- Samsung Electronics reserves the right to change products or specification without notice