K4N51163QZ Datasheet PDF - Samsung 512Mbit gDDR2 SDRAM Specs

K4N51163QZ - 512Mbit gDDR2 SDRAM

Datasheet Summary

Description

FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device.

graphic double-data-rate transfer rates of up to 500MHz for general applications.

Features

1.8V + 0.1V power supply for device operation.
1.8V + 0.1V power supply for I/O interface.
4 Banks operation.
Posted CAS.
Programmable CAS Letency : 5, 6, 7.
Programmable Additive Latency : 0, 1, 2, 3, 4, 5, 6.
Write Latency (WL) = Read Latency (RL) -1.
Burst Legth : 4 and 8 (Interleave/nibble sequential).
Programmable Sequential/ Interleave Burst Mode.
Bi-directional Differential Data-Strobe (Single-ende.

Datasheet Details

Part number	K4N51163QZ
Manufacturer	Samsung
File Size	1.37 MB
Description	512Mbit gDDR2 SDRAM
Datasheet	K4N51163QZ Datasheet
Additional preview pages of the K4N51163QZ datasheet.

📁 Similar Datasheet

K4N25 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)

K4N25A - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)

K4N25G - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)

K4N25H - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)

K4N26 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)

K4N27 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)

K4N28 - Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)

K4N29 - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)

K4N29A - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)

K4N30 - Photocoupler(These Photocouplers cosist of a Gallium Arsenide Infrared Emitting) (KODENSHI KOREA CORP)

Full PDF Text Transcription

Click to expand full text

K4N51163QZ 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM 84FBGA with Halogen-Free & Lead-Free (RoHS compliant) Revision 1.3 September 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

Published: Jul 16, 2016 |