K4N51163QZ Description
FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device. This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 500MHz for general applications. The chip is designed to ply with the following key gDDR2 SDRAM.
K4N51163QZ Key Features
- 1.8V + 0.1V power supply for device operation
- 1.8V + 0.1V power supply for I/O interface
- 4 Banks operation
- Posted CAS
- Programmable CAS Letency : 5, 6, 7
- Programmable Additive Latency : 0, 1, 2, 3, 4, 5, 6
- Write Latency (WL) = Read Latency (RL) -1
- Burst Legth : 4 and 8 (Interleave/nibble sequential)
- Programmable Sequential/ Interleave Burst Mode
- Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
K4N51163QZ Applications
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