Overview: K4N51163QZ 512M gDDR2 SDRAM 512Mbit gDDR2 SDRAM
84FBGA with Halogen-Free & Lead-Free (RoHS pliant)
Revision 1.3 September 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. 1 of 64 Rev 1.3 September 2008 K4N51163QZ 512M gDDR2 SDRAM Revision History Revision 1.0 1.1 1.2 Month December
June July Year 2007 2008 2008 1.3 September 2008 History
- Final Spec. released
- Added 1000Mbps speed bin
- Thermal Characteristics on page 10
DC Characteristics on page 9 - Added current data(IDD) for 1000Mbps speed bin Thermal Characteristics on page 10 - Added values 2 of 64 Rev 1.3 September 2008 K4N51163QZ 512M gDDR2 SDRAM 8M x 16Bit x 4 Banks graphic DDR2 Synchronous DRAM with Differential Data Strobe 1.
