K4N56163QG Description
FOR 4M x 16Bit x 4 Bank gDDR2 SDRAM The.
K4N56163QG Key Features
- 1.8V + 0.1V power supply for device operation for -ZC25/2A
- 1.8V + 0.1V power supply for I/O interface for -ZC25/2A
- 2.0V + 0.1V power supply for device operation for -ZC20/22
- 2.0V + 0.1V power supply for I/O interface for -ZC20/22
- 4 Banks operation
- Posted CAS
- Programmable CAS Letency : 4,5,6
- Programmable Additive Latency : 0, 1, 2, 3. 4 and 5
- Write Latency (WL) = Read Latency (RL) -1
- Burst Legth : 4 and 8 (Interleave/nibble sequential)
K4N56163QG Applications
- Samsung Electronics reserves the right to change products or specification without notice