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K4N56163QG - 256Mbit gDDR2 SDRAM

General Description

The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device.

This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications.

Key Features

  • 1.8V + 0.1V power supply for device operation for -ZC25/2A.
  • 1.8V + 0.1V power supply for I/O interface for -ZC25/2A.
  • 2.0V + 0.1V power supply for device operation for -ZC20/22.
  • 2.0V + 0.1V power supply for I/O interface for -ZC20/22.
  • 4 Banks operation.
  • Posted CAS.
  • Programmable CAS Letency : 4,5,6.
  • Programmable Additive Latency : 0, 1, 2, 3. 4 and 5.
  • Write Latency (WL) = Read Latency (RL) -1.
  • Burst Legth :.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4N56163QF-GC 256Mbit gDDR2 SDRAM
K4N51163QC 512Mbit gDDR2 SDRAM
K4N51163QC-ZC 512Mbit gDDR2 SDRAM
K4N51163QZ 512Mbit gDDR2 SDRAM
K4N26323AE-GC 128Mbit GDDR2 SDRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K4N56163QG 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 1.4 December 2006 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.