K4N56163QF-GC Datasheet PDF - Samsung 256Mbit gDDR2 SDRAM Specs

K4N56163QF-GC - 256Mbit gDDR2 SDRAM

Datasheet Summary

Description

The 256Mb gDDR2 SDRAM chip is organized as 4Mbit x 16 I/O x 4banks banks device.

This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 1000Mb/sec/pin for general applications.

Features

1.8V + 0.1V power supply for device operation.
1.8V + 0.1V power supply for I/O interface.
4 Banks operation.
Posted CAS.
Programmable CAS Letency : 4,5,6 and 7.
Programmable Additive Latency : 0, 1, 2, 3. 4 and 5.
Write Latency (WL) = Read Latency (RL) -1.
Burst Legth : 4 and 8 (Interleave/nibble sequential).
Programmable Sequential/ Interleave Burst Mode.
Bi-directional Differential Data-Strobe (Single-.

Datasheet Details

Part number	K4N56163QF-GC
Manufacturer	Samsung
File Size	1.37 MB
Description	256Mbit gDDR2 SDRAM
Datasheet	K4N56163QF-GC Datasheet
Additional preview pages of the K4N56163QF-GC datasheet.

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Full PDF Text Transcription

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K4N56163QF-GC 256M gDDR2 SDRAM 256Mbit gDDR2 SDRAM Revision 2.0 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.

Published: Jul 16, 2016 |