K4N51163QC - 512Mbit gDDR2 SDRAM

Samsung

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Datasheet Details

Part number	K4N51163QC
Manufacturer	Samsung
File Size	1.00 MB
Description	512Mbit gDDR2 SDRAM
Datasheet	K4N51163QC-Samsung.pdf

K4N51163QC Product details

Description

FOR 8M x 16Bit x 4 Bank gDDR2 SDRAM The 512Mb gDDR2 SDRAM chip is organized as 8Mbit x 16 I/O x 4banks banks device.This synchronous device achieve high speed graphic double-data-rate transfer rates of up to 800Mb/sec/pin for general applications.The chip is designed to comply with the following key gDDR2 SDRAM

Features

1.8V + 0.1V power supply for device operation.
1.8V + 0.1V power supply for I/O interface.
4 Banks operation.
Posted CAS.
Programmable CAS Letency : 3,4,5.
Programmable Additive Latency : 0, 1, 2, 3 and 4.
Write Latency (WL) = Read Latency (RL) -1.
Burst Legth : 4 and 8 (Interleave/nibble sequential).
Programmable Sequential/ Interleave Burst Mode 512M gDDR2 SDRAM.
Bi-directional Differential Data-Strobe.

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Published: Apr 4, 2014 |