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K6R4008C1C Datasheet - Samsung

512K x 8bit High Speed Static CMOS SRAM

K6R4008C1C Features

* Fast Access Time 10,12,15,20ns(Max.)

* Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating K6R4008C1C-10 : 170mA(Max.) K6R4008C1C-12 : 160mA(Max.) K6R4008C1C-15 : 150mA(Max.) K6R4008C1C-20 : 140mA(Max.)

* Single 5.0V±10% Power Supply

* TTL

K6R4008C1C General Description

The K6R4008C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The K6R4008C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

K6R4008C1C Datasheet (183.32 KB)

Preview of K6R4008C1C PDF

Datasheet Details

Part number:

K6R4008C1C

Manufacturer:

Samsung

File Size:

183.32 KB

Description:

512k x 8bit high speed static cmos sram.
PRELIMINARY K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM(5V Operating). Operated at Extended and.

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K6R4008C1C 512K 8bit High Speed Static CMOS SRAM Samsung

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