K9WBG08U1M Datasheet - Samsung

FLASH MEMORY

K9WBG08U1M Features

* Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V

* Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit

* Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte

* Page Read Operation - Pa

K9WBG08U1M General Description

Offered in 2Gx8bit, the K9KAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. The device is offered in 3.3V vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 200µs on the (4K+128)Byte page and.

K9WBG08U1M Datasheet (1.80 MB)

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Datasheet Details

Part number:

K9WBG08U1M

Manufacturer:

Samsung

File Size:

1.80 MB

Description:

Flash memory.
K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT T.

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K9WBG08U1M FLASH MEMORY Samsung

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K9WBG08U1M Features

K9WBG08U1M General Description

Datasheet Details

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Description:

K9WBG08U1M Distributor