K9WBG08U1M Datasheet | Samsung Semiconductor

K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. - Samsung Electronics reserves the right to change products or specification without notice. Free Datasheet http://.datasheetlist./ K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY Document Title 2G x 8 Bit / 4G x 8 Bit / 8G x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. Add random data output after Read for copy 2. Add read for copy-back with data output timing guide 3. Modify 2-plane copy-back program operation 4. Modify 2KB program operation timing guide 1. Interleave two plane copy-back program timing is added. 2. QDP LGA package is added. 3. t CSD is changed. (10ns -> 0ns) 1. Two-Plane Copy Back Program page address is corrected. 1. WELP package is added. 1. WELP-DSP dimension is changed 2. Capacitance is changed 3. Two plane read restriction is deleted 1. -PCK/-PIK part is added. 1. max. Erase time is changed. (2ms -> 10ms) 1. Read to Program interleave with Random Data Out operation is added. Draft Date Dec, 26th 2006 Feb. 2nd 2007 Remark Advance Preliminary Mar. 31st 2007 Final 1.1 1.2 1.3 July 27th 2007 Oct....