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K9WBG08U1M - FLASH MEMORY

This page provides the datasheet information for the K9WBG08U1M, a member of the K9WB-G08U FLASH MEMORY family.

Datasheet Summary

Description

Offered in 2Gx8bit, the K9KAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit.

The device is offered in 3.3V vcc.

Its NAND cell provides the most cost-effective solution for the solid state application market.

Features

  • Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
  • Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • K9NCG08U5M : 50ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.

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Datasheet preview – K9WBG08U1M

Datasheet Details

Part number K9WBG08U1M
Manufacturer Samsung
File Size 1.80 MB
Description FLASH MEMORY
Datasheet download datasheet K9WBG08U1M Datasheet
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Full PDF Text Transcription

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K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2.
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