K9WBG08U1M Datasheet Flash Memory

Manufacturer: Samsung Semiconductor

Overview: K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	K9WBG08U1M
Manufacturer	Samsung Semiconductor
File Size	1.80 MB
Description	FLASH MEMORY
Datasheet	K9WBG08U1M K9WB-G08U Datasheet (PDF)

Key Features

Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
K9NCG08U5M : 50ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.

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More Datasheets from Samsung Semiconductor

Part Number	Description
K9W4G08U1M	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G16U1M	256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W8G08U1M	512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G16U1M	Nand Flash Memory
K9WAG08U1D	4Gb D-die NAND Flash
K9WAG08U1E	4Gb E-die NAND Flash
K9WAG08U1F	4Gb F-die NAND Flash