K9WBG08U1M - FLASH MEMORY

Product Overview

Samsung

Part number	K9WBG08U1M
Manufacturer	Samsung
File Size	1.80 MB
Description	FLASH MEMORY
Datasheet	K9WBG08U1M Datasheet
Note	This datasheet PDF includes multiple part numbers: K9WBG08U1M, K9WB-G08U. Please refer to the document for exact specifications by model.
Additional preview pages of the K9WBG08U1M datasheet.

Offered in 2Gx8bit, the K9KAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit.

The device is offered in 3.3V vcc.

Its NAND cell provides the most cost-effective solution for the solid state application market.

Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V.
Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
K9NCG08U5M : 50ns(Min. ).
Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.

📁 Similar Datasheet

K9WAG08U1A - (K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory (Samsung semiconductor)
K9WAG08U1M - (K9xxG08UxM) 1G x 8 Bit / 2G x 8 Bit NAND Flash Memory (Samsung semiconductor)

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Published: Mar 10, 2014 |