K9WBG08U1M datasheet, memory equivalent, Samsung

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K9WBG08U1M Features and benefits

* Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V
* Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit
* Automati.

K9WBG08U1M Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

K9WBG08U1M Description

Offered in 2Gx8bit, the K9KAG08U0M is a 16G-bit NAND Flash Memory with spare 512M-bit. The device is offered in 3.3V vcc. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be perfo.

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