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K9WBG08U1M - FLASH MEMORY

Download the K9WBG08U1M datasheet PDF. This datasheet also covers the K9WB-G08U variant, as both devices belong to the same flash memory family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (K9WB-G08U-1M.pdf) that lists specifications for multiple related part numbers.

Overview

K9WBG08U1M K9KAG08U0M K9NCG08U5M FLASH MEMORY K9XXG08XXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

Key Features

  • Voltage Supply - 3.3V Device(K9XXG08UXM) : 2.7V ~ 3.6V.
  • Organization - Memory Cell Array : (2G + 64M) x 8bit - Data Register : (4K + 128) x 8bit.
  • Automatic Program and Erase - Page Program : (4K + 128)Byte - Block Erase : (256K + 8K)Byte.
  • Page Read Operation - Page Size : (4K + 128)Byte - Random Read : 25µs(Max. ) - Serial Access : 25ns(Min. ).
  • K9NCG08U5M : 50ns(Min. ).
  • Fast Write Cycle Time - Page Program time : 200µs(Typ. ) - Block Erase Time : 1.

More Datasheets from Samsung Semiconductor

Part Number Description
K9W4G08U1M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W4G16U1M 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9W8G08U1M 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
K9W8G16U1M Nand Flash Memory
K9WAG08U1D 4Gb D-die NAND Flash
K9WAG08U1E 4Gb E-die NAND Flash
K9WAG08U1F 4Gb F-die NAND Flash