K9F1G08R0B datasheet, memory equivalent, Samsung Electronics

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K9F1G08R0B Features and benefits

* Voltage Supply www.DataSheet4U.com - 1.8V Device(K9F1G08R0B) : 1.65V ~ 1.95V
* Organization - Memory Cell Array : (128M + 4M) x 8bit - Data Register : (2K + 64).

K9F1G08R0B Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

K9F1G08R0B Description

Offered in 128Mx8bit, the K9F1G08R0B is a 1G-bit NAND Flash Memory with spare 32M-bit. Its NAND cell provides the most costeffective solution for the solid state application market. A program operation can be performed in typical 200µs on the (2K+64).

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