• Part: K9F2G08B0B
  • Manufacturer: Samsung Electronics
  • Size: 862.61 KB
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K9F2G08B0B Key Features

  • Voltage Supply
  • 2.7V device(K9F2G08B0B): 2.50V ~ 2.90V
  • 3.3V device(K9F2G08U0B): 2.70V ~ 3.60V
  • Organization
  • Memory Cell Array : (256M + 8M) x 8bit
  • Data Register : (2K + 64) x 8bit
  • Automatic Program and Erase
  • Page Program : (2K + 64)Byte
  • Block Erase : (128K + 4K)Byte
  • Page Read Operation

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K9F2G08B0B Description

Offered in 256Mx8bit, the K9F2G08X0B is a 2G-bit NAND Flash Memory with spare 64M-bit. Its NAND cell provides the most costeffective solution for the solid state application market.

K9F2G08B0B Applications

  • Samsung Electronics reserves the right to change products or specification without notice