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K3N5VU1000D-TC Datasheet - Samsung Semiconductor

16M-Bit (2M X 8 / 1M X 16) CMOS Mask ROM

K3N5VU1000D-TC Features

* Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode)

* Fast access time : 100ns(Max.)

* Supply voltage : single +3.0V/ single +3.3V

* Current consumption Operating : 40mA(Max.) Standby : 30µA(Max.)

* Fully static operation

* All

K3N5VU1000D-TC General Description

The K3N5V(U)1000D-TC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152x8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V.

K3N5VU1000D-TC Datasheet (81.04 KB)

Preview of K3N5VU1000D-TC PDF

Datasheet Details

Part number:

K3N5VU1000D-TC

Manufacturer:

Samsung Semiconductor

File Size:

81.04 KB

Description:

16m-bit (2m x 8 / 1m x 16) cmos mask rom.

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TAGS

K3N5VU1000D-TC 16M-Bit CMOS Mask ROM Samsung Semiconductor

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