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K3N5VU1000F-DC Datasheet 16M-Bit (2Mx8 / 1Mx16) CMOS Mask ROM

Manufacturer: Samsung Semiconductor

Download the K3N5VU1000F-DC datasheet PDF. This datasheet also includes the K3N5V1000F-DC variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K3N5V1000F-DC_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The K3N5V(U)1000F-D(G)C is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 2,097,152 x 8 bit(byte mode) or as 1,048,576x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with 3.0V or 3.3V power supply, and all inputs and outputs are TTL compatible.

Because of its asynchronous operation, it requires no external clock assuring extremely easy operation.

It is suitable for use in program memory of microprocessor, and data memory, character generator.

Overview

K3N5V(U)1000F-D(G)C 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM.

Key Features

  • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode).
  • Fast access time 3.3V Operation : 100ns(Max. )@CL=50pF, 120ns(Max. )@CL=100pF 3.0V Operation : 120ns(Max. )@CL=100pF.
  • Supply voltage : single +3.0V/single +3.3V www. DataSheet4U. com.
  • Current consumption Operating : 40mA(Max. ) Standby : 30µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. K3N5V(U)1000.

More Datasheets from Samsung Semiconductor

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