K6T2008S2A Description
The K6T2008S2A families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support industrial temperature ranges and have small package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.
K6T2008S2A Key Features
- Process Technology: TFT
- Organization: 256Kx8
- Power Supply Voltage: 2.3 ~ 2.7V
- Low Data Retention Voltage: 2V(Min)
- Three state output and TTL patible
- Package Type: 32-TSOP1-0813.4F, 48(36)-FBGA-6.00x7.00
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