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K7D163674B Datasheet 512kx36 & 1mx18 Sram

Manufacturer: Samsung Semiconductor

Overview: K7D163674B K7D161874B Document Title 16M DDR SYNCHRONOUS SRAM www.DataSheet4U.com 512Kx36 & 1Mx18 SRAM Revision History Rev No. Rev. 0.0 Rev. 0.1 History Initial document. Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS -to support 1.8~2.5V VDD, change some items. Change DC CHARACTERISTICS (Stop Clock Standby Current) -ISB1 : 100 -> 150 Change JTAG Instruction Cording - For Reserved Change DC CHARACTERISTICS (Increase Operating Current) - x36 : add 40mA, x18 : add 60mA Add DC CHARACTERISTICS - VIN-CLK, VDIF-CLK, VCM-CLK Add AC INPUT CHARACTERISTICS Add INPUT DEFINITION Draft Data Oct. 2003 Nov. 2003 Remark Advance Preliminary Rev. 0.2 Feb. 2004 Preliminary Rev. 0.3 Feb. 2004 Preliminary Rev. 1.0 Mar. 2004 Final Rev. 1.1 Jan. 2004 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters. -1- Rev 1.1 Jan.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The K7D163674B and K7D161874B are 18,874,

Key Features

  • 512Kx36 or 1Mx18 Organizations. 1.8~2.5V VDD/1.5V VDDQ. (1.9V max VDDQ) HSTL Input and Outputs. Single Differential HSTL Clock. Synchronous Pipeline Mode of Operation with Self-Timed Late Write.
  • Free Running Active High and Active Low Echo Clock Output Pin.
  • Asynchronous Output Enable.
  • www. DataSheet4U. com 512Kx36 & 1Mx18 SRAM.
  • Registered Addresses, Burst Control and Data Inputs.
  • Registered Outputs.

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