• Part: KM732V696L
  • Description: 64Kx32-Bit Synchronous Pipelined Burst SRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 436.77 KB
KM732V696L Datasheet (PDF) Download
Samsung Semiconductor
KM732V696L

Description

The KM732V696/L is a 2,097,152 bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 64K words of 32bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; GW, BW, LBO, ZZ.

Key Features

  • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD=3.3V-5%/+10% Power Supply for 3.3V I/O VDD=3.3V±5% Power Supply for 2.5V I/O I/O Supply Voltage : 3.3V-5%/+10% for 3.3V I/O or 2.5V+0.4V/-0.13V for 2.5V I/O 5V Tolerant Inputs except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. LBO Pin allows a choice of either a interleaved burst or a linear burst. Three Chip Enables for simple depth expansion with No Data Contention ; 2cycle Enable, 1cycle Disable. Asynchronous Output Enable Control. ADSP, ADSC, ADV Burst Control Pins. TTL-Level Three-State Output. 100-TQFP-1420A