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KM732V696L Datasheet 64kx32-bit Synchronous Pipelined Burst Sram

Manufacturer: Samsung Semiconductor

Overview: PRELIMINARY KM732V696/L Document Title 64Kx32-Bit Synchronous Pipelined Burst SRAM, 3.3V Power, 2.5V or 3.3V I/O Datasheets for 100TQFP 64Kx32 Synchronous SRAM Revision History Rev . No. Rev. 0.0 Rev. 1.0 History Initial draft Final spec release Draft Date Jan. 19.1996 May. 25. 1997 Remark Preliminary Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- May 1997 Rev 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The KM732V696/L is a 2,097,152 bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

It is organized as 64K words of 32bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications;

GW, BW, LBO, ZZ.

Key Features

  • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Control Registers. VDD=3.3V-5%/+10% Power Supply for 3.3V I/O VDD=3.3V±5% Power Supply for 2.5V I/O I/O Supply Voltage : 3.3V-5%/+10% for 3.3V I/O or 2.5V+0.4V/-0.13V for 2.5V I/O 5V Tol.

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