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KM732V696 Datasheet - Samsung Semiconductor

KM732V696, 64Kx32-Bit Synchronous Pipelined Burst SRAM

PRELIMINARY KM732V696/L Document Title 64Kx32-Bit Synchronous Pipelined Burst SRAM, 3.3V Power, 2.5V or 3.3V I/O Datasheets for 100TQFP 64Kx32 Synchr.
The KM732V696/L is a 2,097,152 bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC ba.
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KM732V696_SamsungSemiconductor.pdf

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Datasheet Details

Part number:

KM732V696

Manufacturer:

Samsung Semiconductor

File Size:

436.77 KB

Description:

64Kx32-Bit Synchronous Pipelined Burst SRAM

Features

* Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chi

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

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