KM718V089 Datasheet, Sram, Samsung semiconductor

KM718V089 Features

• Sram
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and C

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Part number:

KM718V089

Manufacturer:

Samsung semiconductor

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536.55kb

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📄 Datasheet

Description:

512kx36 & 1mx18 synchronous sram. The KM736V989 and KM718V089 are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cac

KM718V089 Application

• Applications GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is pe

TAGS

KM718V089

Samsung semiconductor

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