Datasheet Specifications
- Part number
- KM718V089
- Manufacturer
- Samsung semiconductor
- File Size
- 536.55 KB
- Datasheet
- KM718V089_Samsungsemiconductor.pdf
- Description
- 512Kx36 & 1Mx18 Synchronous SRAM
Description
KM736V989 KM718V089 Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.No..Features
* Synchronous Operation.Applications
* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the addressKM718V089 Distributors
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