KM718V987 Datasheet - Samsung semiconductor

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KM718V987 (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM

KM736V887 KM718V987 Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev.No.0.0 0..
The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and.

KM718V987_Samsungsemiconductor.pdf

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Datasheet Details

Part number:

KM718V987

Manufacturer:

Samsung semiconductor

File Size:

574.50 KB

Description:

(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM

Features

* Synchronous Operation.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* 3.3V+0.165V/-0.165V Power Supply.
* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

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KM718V987 KM736V887 KM718V987 256Kx36 512Kx18 Synchronous SRAM Samsung semiconductor

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