KM718V987 Datasheet, Sram, Samsung semiconductor

KM718V987 Features

• Sram
• Synchronous Operation.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• 3.3V+0.165V/-0.165V Powe

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Part number:

KM718V987

Manufacturer:

Samsung semiconductor

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574.50kb

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📄 Datasheet

Description:

(km736v887 / km718v987) 256kx36 & 512kx18 synchronous sram. The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cach

KM718V987 Application

• Applications GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is pe

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KM718V987

Samsung semiconductor

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