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KM736V989 Datasheet - Samsung semiconductor

512Kx36 & 1Mx18 Synchronous SRAM

KM736V989 Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 3.3V +0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V +0.165V/-0.16

KM736V989 General Description

The KM736V989 and KM718V089 are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(1M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter a.

KM736V989 Datasheet (536.55 KB)

Preview of KM736V989 PDF

Datasheet Details

Part number:

KM736V989

Manufacturer:

Samsung semiconductor

File Size:

536.55 KB

Description:

512kx36 & 1mx18 synchronous sram.
KM736V989 KM718V089 Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. .

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KM736V989 512Kx36 1Mx18 Synchronous SRAM Samsung semiconductor

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