KM736V989 Datasheet (Samsung semiconductor) - 512Kx36 & 1Mx18 Synchronous SRAM

KM736V989, 512Kx36 & 1Mx18 Synchronous SRAM

The KM736V989 and KM718V089 are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

It is organized as 512K(1M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter a

KM736V989 KM718V089 Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev.

No.

0.0 0.1 0.2 History Initial draft 1.

Update ICC & ISB values.

Change ISB value from 150mA to 110mA at -67.

Change ISB value from 130mA to 90mA at -72 .

Change ISB value from 120mA to 80mA at -10 .

Add tCYC 167MHz and 183MHz.

Changed DC condition at Icc and parameters Icc ; from 420mA to 400mA at -67, from 400mA to 380mA at -72, from

KM736V989 Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 3.3V +0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V +0.165V/-0.16