KM736V989 - 512Kx36 & 1Mx18 Synchronous SRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	KM736V989
Manufacturer	Samsung semiconductor
File Size	536.55 KB
Description	512Kx36 & 1Mx18 Synchronous SRAM
Datasheet	KM736V989 Datasheet
Additional preview pages of the KM736V989 datasheet.

Product details

Description

The KM736V989 and KM718V089 are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD= 3.3V +0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V +0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.

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Other Datasheets by Samsung semiconductor

KM736V887 - (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM
KM736FV4021 - (KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM718FV4021 - (KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM718V089 - 512Kx36 & 1Mx18 Synchronous SRAM
KM718V887 - 256Kx18 Synchronous SRAM
KM718V987 - (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM

Published: Apr 16, 2005 |