KM736V689 Datasheet - Samsung Semiconductor

KM736V689 64Kx36-Bit Synchronous Pipelined Burst SRAM

The KM736V689/L is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 64K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new func.

PRELIMINARY KM736V689/L Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev. No. Rev. 0.0 Rev. 1.0 Rev. 1.1 64Kx36 Synchronous SRAM History Initial draft Final spec release Change -10/-11 tDS from 2.0ns to 2.5ns Draft Date Nov. 17. 1996 May. 01. 1997 Jun. 11. 1997 Remark Preliminary Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the.

KM736V689 Features

* Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Contro

KM736V689_SamsungSemiconductor.pdf