KM736V689 Datasheet - Samsung Semiconductor

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KM736V689 64Kx36-Bit Synchronous Pipelined Burst SRAM

PRELIMINARY KM736V689/L Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev.No.Rev.0.
The KM736V689/L is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC ba.

KM736V689_SamsungSemiconductor.pdf

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Datasheet Details

Part number:

KM736V689

Manufacturer:

Samsung Semiconductor

File Size:

433.23 KB

Description:

64Kx36-Bit Synchronous Pipelined Burst SRAM

Features

* Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and Contro

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

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KM736V689 64Kx36-Bit Synchronous Pipelined Burst SRAM Samsung Semiconductor

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