Datasheet Specifications
- Part number
- KM736V689
- Manufacturer
- Samsung Semiconductor
- File Size
- 433.23 KB
- Datasheet
- KM736V689_SamsungSemiconductor.pdf
- Description
- 64Kx36-Bit Synchronous Pipelined Burst SRAM
Description
PRELIMINARY KM736V689/L Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 100TQFP Revision History Rev.No.Rev.0.
Features
* Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address and ControApplications
* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the addressKM736V689 Distributors
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