KM736V687 Datasheet - Samsung Semiconductor

KM736V687 64Kx36-Bit Synchronous Burst SRAM

The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And with CS1 high, ADSP is blocked to control signals. It can be organized as 64K words of 36 bits. And it integrates address and contro.

PRELIMINARY KM736V687 Document Title 64Kx36-Bit Synchronous Burst SRAM, 3.3V Power Datasheets for 100TQFP 64Kx36 Synchronous SRAM Revision History Rev. No. Rev. 0.0 Rev. 1.0 History Initial draft Final spec release Draft Date Nov. 02. 1996 May. 27. 1997 Remark Preliminary Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests a.

KM736V687 Features

* Synchronous Operation. On-Chip Address Counter. Write Self-Timed Cycle. On-Chip Address and Control Registers. Single 3.3V ±5% Power Supply. 5V Tolerant Inputs except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. Asynchronous O

KM736V687_SamsungSemiconductor.pdf