KM736V687 - 64Kx36-Bit Synchronous Burst SRAM

Product Overview

Samsung Semiconductor

Datasheet Details

Part number	KM736V687
Manufacturer	Samsung Semiconductor
File Size	457.78 KB
Description	64Kx36-Bit Synchronous Burst SRAM
Datasheet	KM736V687 Datasheet
Additional preview pages of the KM736V687 datasheet.

Product details

Description

The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system.

Features

Synchronous Operation. On-Chip Address Counter. Write Self-Timed Cycle. On-Chip Address and Control Registers. Single 3.3V ±5% Power Supply. 5V Tolerant Inputs except I/O Pins. Byte Writable Function. Global Write Enable Controls a full bus-width write. Power Down State via ZZ Signal. Asynchronous Output Enable Control. ADSP, ADSC, ADV Burst Control Pins. LBO Pin allows a choice of either a interleaved burst or a linear burst.
Three Chip Enables for simple depth expansion with No Data.

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Other Datasheets by Samsung Semiconductor

KM736V687A - 64Kx36-Bit Synchronous Burst SRAM
KM736V689 - 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V689A - 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V747 - (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
KM736V749 - (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
KM736V787 - 128Kx36 Synchronous SRAM

Published: Sep 30, 2005 |