KM736V689A Datasheet - Samsung Semiconductor

KM736V689A 64Kx36-Bit Synchronous Pipelined Burst SRAM

The KM736V689A is a 2,359,296-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 64K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new funct.

PRELIMINARY KM736V689A Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM 64Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change tOH Min value from 1.3 to 1.0 at tCYC 5.0 Change tHZC Min value from 1.3 to 1.0 at tCYC 5.0 Add tCYC 183MHz, 225MHz Change DC Characteristics. Icc value from 260mA to 280mA at -72 ISB1 value from 10mA to 20mA ISB2 value from 10mA to 20mA Final spec release. Add VDDQ Supply voltage( 2.5V ) Draft Date May. 19. 1998 July. 13. 1998.

KM736V689A Features

* Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Self-Timed Write Cycle. On-Chip Address

KM736V689A_SamsungSemiconductor.pdf