KM718V887 Datasheet, Sram, Samsung semiconductor

KM718V887 Features

• Sram
• Synchronous Operation.
• On-Chip Address Counter.
• Write Self-Timed Cycle.
• On-Chip Address and Control Registers.
• VDD= 3.3V+0.3V/-0.165V P

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Part number:

KM718V887

Manufacturer:

Samsung semiconductor

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470.96kb

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📄 Datasheet

Description:

256kx18 synchronous sram. The KM718V887 is a 4,718,592 bit Synchronous Static Random Access Memory designed for support zero wait state performance for advance

KM718V887 Application

• Applications Write cycles are internally self-timed and synchronous. The self-timed write feature eliminates complex off chip write pulse shaping l

TAGS

KM718V887

Samsung semiconductor

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