KM718V887 256Kx18 Synchronous SRAM

Samsung semiconductor

Description

KM718V887 Document Title 256Kx18-Bit Synchronous Burst SRAM 256Kx18 Synchronous SRAM Revision History Rev.No.0.0 0.1 History Initial draft Modify .
The KM718V887 is a 4,718,592 bit Synchronous Static Random Access Memory designed for support zero wait state performance for advanced Pentium/Power P.

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Datasheet Specifications

Part number: KM718V887
Manufacturer: Samsung semiconductor
File Size: 470.96 KB
Datasheet: KM718V887_Samsungsemiconductor.pdf
Description: 256Kx18 Synchronous SRAM

Features

* Synchronous Operation.
* On-Chip Address Counter.
* Write Self-Timed Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V+0.3V/-0.165V Power Supply.
* VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.

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KM718V887 256Kx18 Synchronous SRAM Samsung semiconductor

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