* Synchronous Operation.
* On-Chip Address Counter.
* Write Self-Timed Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V+0.3V/-0.165V Power Supply.
* VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
KM718V887 Datasheet (470.96 KB)
KM718V887
Samsung semiconductor
470.96 KB
256kx18 synchronous sram.
KM718V887 Document Title 256Kx18-Bit Synchronous Burst SRAM 256Kx18 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify .
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