KM718V887 - 256Kx18 Synchronous SRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	KM718V887
Manufacturer	Samsung semiconductor
File Size	470.96 KB
Description	256Kx18 Synchronous SRAM
Datasheet	KM718V887 Datasheet
Additional preview pages of the KM718V887 datasheet.

Product details

Description

The KM718V887 is a 4,718,592 bit Synchronous Static Random Access Memory designed for support zero wait state performance for advanced Pentium/Power PC address pipelining.

Features

Synchronous Operation.
On-Chip Address Counter.
Write Self-Timed Cycle.
On-Chip Address and Control Registers.
VDD= 3.3V+0.3V/-0.165V Power Supply.
VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Power Down State via ZZ Signal.
Asynchronou.

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Other Datasheets by Samsung semiconductor

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Published: Dec 13, 2005 |