KM736V887 Datasheet - Samsung semiconductor

KM736V887 (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter .

KM736V887 KM718V987 Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change DC Characteristics. ISB value from 60mA to 90mA at -8 ISB value from 50mA to 80mA at -9 ISB value from 40mA to 70mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13.0ns to 12.0ns at -10 3. Changed DC condition at Icc and parameters ICC ; .

KM736V887 Features

* Synchronous Operation.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

KM736V887 Datasheet (574.50 KB)