KM736V887 - (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	KM736V887
Manufacturer	Samsung semiconductor
File Size	574.50 KB
Description	(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM
Datasheet	KM736V887 Datasheet
Note	This datasheet PDF includes multiple part numbers: KM736V887, KM718V987. Please refer to the document for exact specifications by model.
Additional preview pages of the KM736V887 datasheet.

Product details

Description

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Power Down State via ZZ Signal.
LBO Pin allows.

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Published: Dec 13, 2005 |