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KM736V887

(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM

KM736V887 Features

* Synchronous Operation.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

KM736V887 General Description

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter .

KM736V887 Datasheet (574.50 KB)

Preview of KM736V887 PDF

Datasheet Details

Part number:

KM736V887

Manufacturer:

Samsung semiconductor

File Size:

574.50 KB

Description:

(km736v887 / km718v987) 256kx36 & 512kx18 synchronous sram.
KM736V887 KM718V987 Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0..

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TAGS

KM736V887 KM736V887 KM718V987 256Kx36 512Kx18 Synchronous SRAM Samsung semiconductor

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