KM736V687A Datasheet - Samsung Semiconductor

KM736V687A - 64Kx36-Bit Synchronous Burst SRAM

The KM736V687A is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And with CS1 high, ADSP is blocked to control signals. It can be organized as 64K words of 36 bits. And it integrates address and contr.

KM736V687A Document Title 64Kx36-Bit Synchronous Burst SRAM 64Kx36 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change DC Characteristics. ICC value from 320mA to 250mA at -7. ICC value from 300mA to 230mA at -8. ICC value from 280mA to 200mA at -9. ISB value from 90mA to 70mA at -7. ISB value from 80mA to 60mA at -8. ISB value from 70mA to 50mA at -9. ISB1 value from 30mA to 20mA ISB2 value from 30mA to 20mA Final spec release. Add VDDQ Supply voltage( 2.5V ) Min t.

KM736V687A Features

* Synchronous Operation.

* On-Chip Address Counter.

* Write Self-Timed Cycle.

* On-Chip Address and Control Registers.

* VDD= 3.3V+0.3V/-0.165V Power Supply.

* VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.

KM736V687A_SamsungSemiconductor.pdf