KM736V747 - (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM

Product Overview

Samsung Semiconductor

Part number	KM736V747
Manufacturer	Samsung Semiconductor
File Size	286.28 KB
Description	(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
Datasheet	KM736V747 Datasheet
Additional preview pages of the KM736V747 datasheet.

The KM736V747 and KM718V847 are 4,718,592-bit Synchronous Static SRAMs.

3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
A interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mode.

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Published: Jan 12, 2011 |