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KM736V747

(KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM

KM736V747 Features

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

* Byte Writable Function.

* Enable clock and suspend operation.

* Single READ/WRITE control pin.

* Self-Timed Write Cycle.

KM736V747 General Description

The KM736V747 and KM718V847 are 4,718,592-bit Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to inpu.

KM736V747 Datasheet (286.28 KB)

Preview of KM736V747 PDF

Datasheet Details

Part number:

KM736V747

Manufacturer:

Samsung Semiconductor

File Size:

286.28 KB

Description:

(km736v747 / km718v847) 128kx36 & 256kx18 flow-through ntram.
KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 .

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TAGS

KM736V747 KM736V747 KM718V847 128Kx36 256Kx18 Flow-Through NtRAM Samsung Semiconductor

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