KM736V747 Datasheet - Samsung Semiconductor

KM736V747 (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM

The KM736V747 and KM718V847 are 4,718,592-bit Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to inpu.

KM736V747 KM718V847 Document Title 128Kx36 & 256Kx18 Flow-Through NtRAMTM 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13ns to 12ns at -10 3. Changed DC condition at Icc and parameters ISB1 ; from 10mA to 30mA, ISB2 ; from 10mA to 30mA Add VDDQ Supply voltage( 2.5V I/O ) Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O. Final spec Release Remove VDDQ Supply voltage(2.5.

KM736V747 Features

* 3.3V+0.165V/-0.165V Power Supply.

* I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O

* Byte Writable Function.

* Enable clock and suspend operation.

* Single READ/WRITE control pin.

* Self-Timed Write Cycle.

KM736V747_SamsungSemiconductor.pdf