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KM736V795 Datasheet - Samsung Semiconductor

KM736V795 128Kx36 Synchronous SRAM

The KM736V795 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new funct.
KM736V795 Document Title 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change DC characteristics VDD condition from VDD=3.3V+10%/-5% Change Input/output leackage currant from ±1µA to ±2µA Modify Read timing & Power down cycle timing. Change ISB2 value from 30mA to 20mA. Remove DC characteristics ISB1 - L ver.& ISB2 - L ver . Remove Low power version. Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pu.

KM736V795 Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 3.3V+0.3V/-0.165V Power Supply.

* I/O Supply Voltage 2.5V+0.4V/-0.13V.

KM736V795_SamsungSemiconductor.pdf

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Datasheet Details

Part number:

KM736V795

Manufacturer:

Samsung Semiconductor

File Size:

321.68 KB

Description:

128kx36 synchronous sram.

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KM736V795 KM736V795 128Kx36 Synchronous SRAM Samsung Semiconductor

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