Datasheet Details
- Part number
- KM736V795
- Manufacturer
- Samsung Semiconductor
- File Size
- 321.68 KB
- Datasheet
- KM736V795_SamsungSemiconductor.pdf
- Description
- 128Kx36 Synchronous SRAM
KM736V795 Description
KM736V795 Document Title 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev.No.0.0 0.1 History Initial d.
The KM736V795 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC base.
KM736V795 Features
* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V+0.3V/-0.165V Power Supply.
* I/O Supply Voltage 2.5V+0.4V/-0.13V.
KM736V795 Applications
* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address
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