KM736V795 128Kx36 Synchronous SRAM

Samsung Semiconductor

Description

KM736V795 Document Title 128Kx36 Synchronous SRAM 128Kx36-Bit Synchronous Pipelined Burst SRAM Revision History Rev.No.0.0 0.1 History Initial d.
The KM736V795 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC base.

📥 Download Datasheet

KM736V795 Datasheet Preview — Preview of KM736V795 PDF

Datasheet Specifications

Part number: KM736V795
Manufacturer: Samsung Semiconductor
File Size: 321.68 KB
Datasheet: KM736V795_SamsungSemiconductor.pdf
Description: 128Kx36 Synchronous SRAM

Features

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V+0.3V/-0.165V Power Supply.
* I/O Supply Voltage 2.5V+0.4V/-0.13V.

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

KM736V795 Distributors

📁 Related Datasheet

KM736V887 KM736V989 KM736FV4021 KM702 KM7101 KM718FV4021

📌 All Tags

KM736V795 128Kx36 Synchronous SRAM Samsung Semiconductor

Samsung Semiconductor KM736V795-like datasheet