KM736V790 128Kx36 Synchronous SRAM

Samsung Semiconductor

Description

KM736V790 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.No.0.0 0.1 History Initial dra.
The KM736V790 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC base.

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Datasheet Specifications

Part number: KM736V790
Manufacturer: Samsung Semiconductor
File Size: 297.54 KB
Datasheet: KM736V790_SamsungSemiconductor.pdf
Description: 128Kx36 Synchronous SRAM

Features

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V+0.3V/-0.165V Power Supply.
* VDDQ Supply Voltage 3.3V+0.3V/-0.165V fo

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS 1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the addres

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KM736V790 128Kx36 Synchronous SRAM Samsung Semiconductor

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