KM736V790 - 128Kx36 Synchronous SRAM

Product Overview

Samsung Semiconductor

Datasheet Details

Part number	KM736V790
Manufacturer	Samsung Semiconductor
File Size	297.54 KB
Description	128Kx36 Synchronous SRAM
Datasheet	KM736V790 Datasheet
Additional preview pages of the KM736V790 datasheet.

Product details

Description

The KM736V790 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD= 3.3V+0.3V/-0.165V Power Supply.
VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Po.

📁 Similar Datasheet

KM736V887 - (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM (Samsung semiconductor)
KM736V989 - 512Kx36 & 1Mx18 Synchronous SRAM (Samsung semiconductor)
KM736FV4021 - (KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM (Samsung semiconductor)
KM702 - Sensor (MEGATRON)
KM7101 - 4.9MHz Rail-to-Rail I/O Amplifier (Fairchild Semiconductor)
KM718FV4021 - (KM736FV4021 / KM718FV4021) 128Kx36 & 256Kx18 Synchronous Pipelined SRAM (Samsung semiconductor)
KM718V089 - 512Kx36 & 1Mx18 Synchronous SRAM (Samsung semiconductor)
KM718V887 - 256Kx18 Synchronous SRAM (Samsung semiconductor)

Other Datasheets by Samsung Semiconductor

KM736V795 - 128Kx36 Synchronous SRAM
KM736V799 - 128Kx36 Synchronous SRAM
KM736V747 - (KM736V747 / KM718V847) 128Kx36 & 256Kx18 Flow-Through NtRAM
KM736V749 - (KM736V749 / KM718V849) 128Kx36 & 256Kx18 Pipelined NtRAM
KM736V787 - 128Kx36 Synchronous SRAM
KM736V789 - 128Kx36 Synchronous SRAM

Published: Jan 12, 2011 |