KM736V789 - 128Kx36 Synchronous SRAM

Product Overview

Samsung Semiconductor

Datasheet Details

Part number	KM736V789
Manufacturer	Samsung Semiconductor
File Size	296.99 KB
Description	128Kx36 Synchronous SRAM
Datasheet	KM736V789 Datasheet
Additional preview pages of the KM736V789 datasheet.

Product details

Description

The KM736V789 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
VDD= 3.3V+0.3V/-0.165V Power Supply.
VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
P.

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Published: Jan 12, 2011 |