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KM736V799 Datasheet - Samsung Semiconductor

128Kx36 Synchronous SRAM

KM736V799 Features

* Synchronous Operation.

* 2 Stage Pipelined operation with 4 Burst.

* On-Chip Address Counter.

* Self-Timed Write Cycle.

* On-Chip Address and Control Registers.

* VDD= 3.3V+0.165V/-0.165V Power Supply.

* VDDQ Supply Voltage 3.3V+0.165V/-0.165

KM736V799 General Description

The KM736V799 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 128K words of 36bits and integrates address and control registers, a 2-bit burst address counter and added some new funct.

KM736V799 Datasheet (297.84 KB)

Preview of KM736V799 PDF

Datasheet Details

Part number:

KM736V799

Manufacturer:

Samsung Semiconductor

File Size:

297.84 KB

Description:

128kx36 synchronous sram.
KM736V799 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev. No 0.0 0.1 History Initial draf.

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KM736V799 128Kx36 Synchronous SRAM Samsung Semiconductor

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