KM736V799 Datasheet - Samsung Semiconductor

KM736V799, 128Kx36 Synchronous SRAM

KM736V799 Document Title 128Kx36-Bit Synchronous Pipelined Burst SRAM 128Kx36 Synchronous SRAM Revision History Rev.No 0.0 0.1 History Initial draf.
The KM736V799 is a 4,718,592-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC base.

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Datasheet Details

Part number:

KM736V799

Manufacturer:

Samsung Semiconductor

File Size:

297.84 KB

Description:

128Kx36 Synchronous SRAM

Features

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 3.3V+0.165V/-0.165V Power Supply.
* VDDQ Supply Voltage 3.3V+0.165V/-0.165

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

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KM736V799 128Kx36 Synchronous SRAM Samsung Semiconductor

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