K4S161622E sdram equivalent, 1m x 16 sdram.
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* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Bu.
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ORDERING INFORMATION
Part NO. K4S161622E-TC55 K4S161622E-TC60 K4S161622E-TC70 K4S161622.
The K4S161622E is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clo.
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