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K4S1G0732B-TC75 Datasheet, Samsung semiconductor

K4S1G0732B-TC75 Datasheet, Samsung semiconductor

K4S1G0732B-TC75

datasheet Download (Size : 126.67KB)

K4S1G0732B-TC75 Datasheet

K4S1G0732B-TC75 b-die equivalent, sdram stacked 1gb b-die.

K4S1G0732B-TC75

datasheet Download (Size : 126.67KB)

K4S1G0732B-TC75 Datasheet

Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.

Application

Ordering Information Part No. K4S1G0732B-TC75 Orgainization st.128Mb x8 Max Freq. 133MHz Interface LVTTL Package 54pin.

Description

The K4S1G0732B is 1,073,741,824bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system.

Image gallery

K4S1G0732B-TC75 Page 1 K4S1G0732B-TC75 Page 2 K4S1G0732B-TC75 Page 3

TAGS

K4S1G0732B-TC75
SDRAM
stacked
1Gb
B-die
Samsung semiconductor

Manufacturer


Samsung semiconductor

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