K4S161622D datasheet, dram equivalent, Samsung semiconductor

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K4S161622D Features and benefits

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* 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Bu.

K4S161622D Application

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* ORDERING INFORMATION Part NO. K4S161622D-TC/L55 K4S161622D-TC/L60 K4S161622D-TC/L70 K4S.

K4S161622D Description

The K4S161622D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clo.

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