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K4S281632B-N Datasheet, Samsung semiconductor

K4S281632B-N Datasheet, Samsung semiconductor

K4S281632B-N

datasheet Download (Size : 64.04KB)

K4S281632B-N Datasheet

K4S281632B-N stsop equivalent, 2m x 16bit x 4 banks synchronous dram in stsop.

K4S281632B-N

datasheet Download (Size : 64.04KB)

K4S281632B-N Datasheet

Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs - CAS latency .

Application

ORDERING INFORMATION Part No. K4S281632B-NC/L1H K4S281632B-NC/L1L Max Freq. 100MHz(CL=2) 100MHz(CL=3) Interface Packag.

Description

The K4S281632B-N is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of syste.

Image gallery

K4S281632B-N Page 1 K4S281632B-N Page 2 K4S281632B-N Page 3

TAGS

K4S281632B-N
16Bit
Banks
Synchronous
DRAM
sTSOP
Samsung semiconductor

Manufacturer


Samsung semiconductor

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