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K4S281632M-TC1L Datasheet, Samsung semiconductor

K4S281632M-TC1L Datasheet, Samsung semiconductor

K4S281632M-TC1L

datasheet Download (Size : 87.41KB)

K4S281632M-TC1L Datasheet

K4S281632M-TC1L lvttl equivalent, 128mbit sdram 2m x 16bit x 4 banks synchronous dram lvttl.

K4S281632M-TC1L

datasheet Download (Size : 87.41KB)

K4S281632M-TC1L Datasheet

Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.

Application

ORDERING INFORMATION Part No. K4S281632M-TC/L80 K4S281632M-TC/L1H K4S281632M-TC/L1L Max Freq. 125MHz(CL=3) 100MHz(CL=2.

Description

The K4S281632M is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .

Image gallery

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TAGS

K4S281632M-TC1L
128Mbit
SDRAM
16Bit
Banks
Synchronous
DRAM
LVTTL
Samsung semiconductor

Manufacturer


Samsung semiconductor

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