K4S513233F-MF, K4S513233F Datasheet (Samsung semiconductor)

K4S513233F-MF - Mobile SDRAM

The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c

K4S513233F-MF Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4S513233F-MF, K4S513233F Datasheet - Samsung semiconductor

K4S513233F-MF - Mobile SDRAM

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