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K4S51323LF-MC Datasheet - Samsung semiconductor

4M x 32Bit x 4 Banks Mobile SDRAM

K4S51323LF-MC Features

* VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EM

K4S51323LF-MC General Description

The K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S51323LF-MC Datasheet (172.62 KB)

Preview of K4S51323LF-MC PDF

Datasheet Details

Part number:

K4S51323LF-MC

Manufacturer:

Samsung semiconductor

File Size:

172.62 KB

Description:

4m x 32bit x 4 banks mobile sdram.

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K4S51323LF-MC 32Bit Banks Mobile SDRAM Samsung semiconductor

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