K4S51323LF-MC 4M x 32Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

Description

K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high.

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Datasheet Specifications

Part number: K4S51323LF-MC
Manufacturer: Samsung semiconductor
File Size: 172.62 KB
Datasheet: K4S51323LF-MC_Samsungsemiconductor.pdf
Description: 4M x 32Bit x 4 Banks Mobile SDRAM

Features

* VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EM

Applications

* ORDERING INFORMATION Part No. K4S51323LF-M(E)C/L/F75 K4S51323LF-M(E)C/L/F1H K4S51323LF-M(E)C/L/F1L Max Freq. 133MHz(CL=3), 111MHz(CL=2) 111MHz(CL=2) 111MHz(CL=3)
* 1, 83MHz(CL2) LVCMOS 90 FBGA Pb (Pb Free) Interface Package - M(E)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~

K4S51323LF-MC Distributors

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K4S51323LF-MC 32Bit Banks Mobile SDRAM Samsung semiconductor

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