K4S51323LF-MEL Datasheet, Sdram, Samsung semiconductor

✔ K4S51323LF-MEL Features

VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3

✔ K4S51323LF-MEL Application

ORDERING INFORMATION Part No. K4S51323LF-M(E)C/L/F75 K4S51323LF-M(E)C/L/F1H K4S51323LF-M(E)C/L/F1L Max Fre

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Part number:

K4S51323LF-MEL

Manufacturer:

Samsung semiconductor

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172.62 KB

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📄 Datasheet

Description:

4m x 32bit x 4 banks mobile sdram. The K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated wit

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K4S51323LF-MEL 32Bit Banks Mobile SDRAM Samsung semiconductor