Description
K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high.
Features
* VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EM
Applications
* ORDERING INFORMATION
Part No. K4S51323LF-M(E)C/L/F75 K4S51323LF-M(E)C/L/F1H K4S51323LF-M(E)C/L/F1L Max Freq. 133MHz(CL=3), 111MHz(CL=2) 111MHz(CL=2) 111MHz(CL=3)
* 1, 83MHz(CL2) LVCMOS 90 FBGA Pb (Pb Free) Interface Package
- M(E)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~