K4S51323LF-MEF Datasheet, Sdram, Samsung semiconductor

K4S51323LF-MEF Features

• Sdram
• VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs. -. CAS

PDF File Details

Part number:

K4S51323LF-MEF

Manufacturer:

Samsung semiconductor

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172.62kb

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📄 Datasheet

Description:

4m x 32bit x 4 banks mobile sdram. The K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated wit

K4S51323LF-MEF Application

• Applications ORDERING INFORMATION Part No. K4S51323LF-M(E)C/L/F75 K4S51323LF-M(E)C/L/F1H K4S51323LF-M(E)C/L/F1L Max Freq. 133MHz(CL=3), 111MHz(CL=

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K4S51323LF-MEF

Samsung semiconductor

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