K4S513233F-MEF, K4S513233F Mobile SDRAM

Samsung semiconductor

Description

K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA .
The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high.

📥 Download Datasheet

K4S513233F-MEF Datasheet Preview — This datasheet PDF includes multiple part numbers: K4S513233F-MEF, K4S513233F. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: K4S513233F-MEF, K4S513233F
Manufacturer: Samsung semiconductor
File Size: 172.18 KB
Datasheet: K4S513233F_Samsungsemiconductor.pdf
Description: Mobile SDRAM
Note: This datasheet PDF includes multiple part numbers: K4S513233F-MEF, K4S513233F.
Please refer to the document for exact specifications by model.

Features

* 3.0V & 3.3V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
* EMRS cycle

Applications

* ORDERING INFORMATION Part No. K4S513233F-M(E)C/L/F75 K4S513233F-M(E)C/L/F1H K4S513233F-M(E)C/L/F1L Max Freq. 133MHz(CL=3), 111MHz(CL=2) 111MHz(CL=2) 111MHz(CL=3)
* 1, 83MHz(CL2) LVCMOS 90 FBGA Pb (Pb Free) Interface Package - M(E)C/L/F : Normal / Low / Low Power, Commercial Temperature(-25°C ~

K4S513233F-MEF Distributors

📁 Related Datasheet

K4S510432D K4S510832D K4S511632D K4S560432E-UC75 K4S560832E-UC75 K4S561632C

📌 All Tags

K4S513233F Mobile SDRAM Samsung semiconductor

Samsung semiconductor K4S513233F-MEF-like datasheet