Datasheet4U Logo Datasheet4U.com

K4S513233F-MF

Mobile SDRAM

K4S513233F-MF Features

* 3.0V & 3.3V power supply.

* LVCMOS compatible with multiplexed address.

* Four banks operation.

* MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).

* EMRS cycle

K4S513233F-MF General Description

The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every c.

K4S513233F-MF Datasheet (172.18 KB)

Preview of K4S513233F-MF PDF

Datasheet Details

Part number:

K4S513233F-MF

Manufacturer:

Samsung semiconductor

File Size:

172.18 KB

Description:

Mobile sdram.

📁 Related Datasheet

K4S513233F-MC - Mobile SDRAM (Samsung semiconductor)
K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .

K4S513233F-MEC - Mobile SDRAM (Samsung semiconductor)
K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .

K4S513233F-MEF - Mobile SDRAM (Samsung semiconductor)
K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .

K4S513233F-MEL - Mobile SDRAM (Samsung semiconductor)
K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .

K4S513233F-ML - Mobile SDRAM (Samsung semiconductor)
K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .

K4S51323LF-MC - 4M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .

K4S51323LF-MEC - 4M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .

K4S51323LF-MEF - 4M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .

TAGS

K4S513233F-MF Mobile SDRAM Samsung semiconductor

Image Gallery

K4S513233F-MF Datasheet Preview Page 2 K4S513233F-MF Datasheet Preview Page 3

K4S513233F-MF Distributor