K4S513233F-MF Datasheet, Sdram, Samsung semiconductor

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K4S513233F-MF

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Samsung semiconductor

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📄 Datasheet

Description:

Mobile sdram. The K4S513233F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated wit

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K4S513233F-MF

Samsung semiconductor

📁 Related Datasheet

K4S513233F-MC - Mobile SDRAM (Samsung semiconductor)
K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .

K4S513233F-MEC - Mobile SDRAM (Samsung semiconductor)
K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .

K4S513233F-MEF - Mobile SDRAM (Samsung semiconductor)
K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .

K4S513233F-MEL - Mobile SDRAM (Samsung semiconductor)
K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .

K4S513233F-ML - Mobile SDRAM (Samsung semiconductor)
K4S513233F - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • 3.0V & 3.3V power supply. • LVCMOS patible with multiplexed address. .

K4S51323LF-MC - 4M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .

K4S51323LF-MEC - 4M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .

K4S51323LF-MEF - 4M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .

K4S51323LF-MEL - 4M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .

K4S51323LF-MF - 4M x 32Bit x 4 Banks Mobile SDRAM (Samsung semiconductor)
K4S51323LF - M(E)C/L/F 4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES • VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V. • LVCMOS patible with multiplexed .