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K4S560832B Datasheet, Samsung semiconductor

K4S560832B Datasheet, Samsung semiconductor

K4S560832B

datasheet Download (Size : 131.52KB)

K4S560832B Datasheet

K4S560832B lvttl equivalent, 256mbit sdram 8m x 8bit x 4 banks synchronous dram lvttl.

K4S560832B

datasheet Download (Size : 131.52KB)

K4S560832B Datasheet

Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.

Application

ORDERING INFORMATION Part No. K4S560832B-TC/L75 K4S560832B-TC/L1H K4S560832B-TC/L1L Max Freq. 133MHz(CL=3) 100MHz(CL=2.

Description

The K4S560832B is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system c.

Image gallery

K4S560832B Page 1 K4S560832B Page 2 K4S560832B Page 3

TAGS

K4S560832B
256Mbit
SDRAM
8bit
Banks
Synchronous
DRAM
LVTTL
Samsung semiconductor

Manufacturer


Samsung semiconductor

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