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K4S560832D Datasheet, Samsung semiconductor

K4S560832D Datasheet, Samsung semiconductor

K4S560832D

datasheet Download (Size : 118.69KB)

K4S560832D Datasheet

K4S560832D lvttl equivalent, 256mbit sdram 8m x 8bit x 4 banks synchronous dram lvttl.

K4S560832D

datasheet Download (Size : 118.69KB)

K4S560832D Datasheet

Features and benefits


* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency.

Application

ORDERING INFORMATION Max Freq. 133MHz(CL=2) 133MHz(CL=3) 100MHz(CL=2) 100MHz(CL=3) LVTTL 54pin TSOP(II) Interface Pack.

Description

The K4S560832D is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 8,392,608 words by 8bits, fabricated with SAMSUNG's high performance CMOS technology. Synchronous design allows precise cycle control with the use of system cl.

Image gallery

K4S560832D Page 1 K4S560832D Page 2 K4S560832D Page 3

TAGS

K4S560832D
256Mbit
SDRAM
8bit
Banks
Synchronous
DRAM
LVTTL
Samsung semiconductor

Manufacturer


Samsung semiconductor

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