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K4S641632H-TL75, K4S 64Mb H-die SDRAM Specification

K4S641632H-TL75 Description

SDRAM 64Mb H-die (x4, x8, x16) CMOS SDRAM 64Mb H-die SDRAM Specification Revision 1.4 November 2003 * Samsung Electronics reserves the right t.
Rev.

K4S641632H-TL75 Features

* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are

K4S641632H-TL75 Applications

* Ordering Information Part No. K4S640432H-TC(L)75 K4S640832H-TC(L)75 K4S641632H-TC(L)60 K4S641632H-TC(L)70 K4S641632H-TC(L)75 4Mb x 16 Orgainization 16Mb x 4 8Mb x 8 Max Freq. 133MHz(CL=3) 133MHz(CL=3) 166MHz(CL=3) 143MHz(CL=3) 133MHz(CL=3) LVTTL 54pin TSOP(II) Interface Package Rev. 1.4 November

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: K4S641632H-TL75, K4S. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
K4S641632H-TL75, K4S
Manufacturer
Samsung semiconductor
File Size
144.25 KB
Datasheet
K4S-64163.pdf
Description
64Mb H-die SDRAM Specification
Note
This datasheet PDF includes multiple part numbers: K4S641632H-TL75, K4S.
Please refer to the document for exact specifications by model.

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64Mb H-die SDRAM Specification Samsung semiconductor
Samsung semiconductor K4S641632H-TL75-like datasheet