K4S Datasheet | Specifications & PDF Download

UJ4C075018K4S - 750V SiC Cascode JFET

Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO247‐4, 750 V, 18 mohm UJ4C075018K4S Description The UJ4C075018K4S is a 750 V, 18 mW

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ON Semiconductor

UF3C120150K4S - SiC Cascode JFET

Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 150 mohm UF3C120150K4S Description This SiC cascode JFET co-packages

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UF3C065040K4S - 650V SiC Cascode

650V-42mW SiC Cascode DATASHEET UF3C065040K4S CASE CASE D (1) Rev. A, January 2019 Description United Silicon Carbide's cascode products co-packag

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ON Semiconductor

UJ4SC075011K4S - SiC JFET

Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-247-4L, 750 V, 11 mohm SiC JFET w/ Si MOSFET UJ4SC075011K4S Description The UJ4SC07

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UJ4C075018K4S - SiC Cascode JFET

DATASHEET UJ4C075018K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 750 V, 18 mohm Rev. B, January 202

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UJ4C075023K4S - SiC Cascode JFET

DATASHEET UJ4C075023K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 750 V, 23 mohm Rev. C, January 202

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UF4SC120023K4S - 1200V SiC Cascode JFET

DATASHEET UF4SC120023K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 23 mohm Rev. B, January 2

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Qorvo

UF4SC120030K4S - SiC JFET

DATASHEET UF4SC120030K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 30 mohm Rev. B, January 2

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UJ4SC075006K4S - 750V SiC Cascode JFET

Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-247-4L, 750 V, 5.9 mohm SiC JFET w/ Si MOSFET UJ4SC075006K4S Description The UJ4SC0

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UF3SC065007K4S - SiC Cascode JFET

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UJ4C075044K4S - SiC Cascode JFET

Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247-4, 750 V, 44 mohm SiC JFET w/ Si MOSFET UJ4C075044K4S Description The UJ4C075044

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UF3N120007K4S - SiC JFET

Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, TO247-4, 1200 V, 7.1 mohm UF3N120007K4S Description onsemi’s UF3N120007K4S is a 1200 V, 7.1 mW

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UJ4N075005K4S - SiC JFET

Silicon Carbide (SiC) JFET – EliteSiC, Power N-Channel, TO247-4, 750 V, 4.8 mohm UJ4N075005K4S Description onsemi’s UJ4N075005K4S is a 750 V, 4.8 mW H

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UJ4SC075009K4S - SiC Cascode JFET

Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-247-4L, 750 V, 9 mohm SiC JFET w/ Si MOSFET UJ4SC075009K4S Description The UJ4SC075

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UJ3C120070K4S - Silicon Carbide Cascode JFET

DATASHEET UJ3C120070K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 70 mohm Rev. B, January 20

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K4S560832B - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

K4S560832B CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to

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K4S560832C - 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL

K4S560832C CMOS SDRAM 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to

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K4S561633F-N - 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC

K4S561633F - X(Z)E/N/G/C/L/F 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES • 3.0V & 3.3V power supply. • LVCMOS compatible with multiplexed addr

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