K4S281632F-Uxx - 128Mb F-die SDRAM
The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows preci
SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification m o .c U 4 54 TSOP-II with Pb-Free t e (RoHS compliant) e h S a t a .D w Revision 1.2 w August 2004 w Samsung Electronics reserves the right to change products or specification without notice.
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at1.2 August 2004 .D w w w SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release.
Revision 1.1 (May, 2004) Added Note 5.
sentense of tRDL para
K4S281632F-Uxx Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
* All inputs are
