K4S281632F-Uxx Datasheet - Samsung semiconductor

K4S281632F-Uxx 128Mb F-die SDRAM

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows preci.

SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification m o .c U 4 54 TSOP-II with Pb-Free t e (RoHS compliant) e h S a t a .D w Revision 1.2 w August 2004 w Samsung Electronics reserves the right to change products or specification without notice. m o .c U 4 t e e h S a Rev. at1.2 August 2004 .D w w w SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release. Revision 1.1 (May, 2004) Added Note 5. sentense of tRDL para.

K4S281632F-Uxx Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S281632F-Uxx_Samsungsemiconductor.pdf