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K4S281632F-UL75

128Mb F-die SDRAM

K4S281632F-UL75 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S281632F-UL75 General Description

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows preci.

K4S281632F-UL75 Datasheet (174.13 KB)

Preview of K4S281632F-UL75 PDF

Datasheet Details

Part number:

K4S281632F-UL75

Manufacturer:

Samsung semiconductor

File Size:

174.13 KB

Description:

128mb f-die sdram.
SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification t4U.com54 TSOP-II with Pb-Free e(RoHS compliant) w.DataSheRevision 1.2 ww.

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K4S281632F-UL75 128Mb F-die SDRAM Samsung semiconductor

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